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| www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET October 2006 FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85m Features General Description Max rDS(on) = 85m at VGS = -4.5V, ID = -1A Max rDS(on) = 123m at VGS = -2.5V, ID = -1A Max rDS(on) = 200m at VGS = -1.5V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB RoHS Compliant tm Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). . Application Battery management Load switch Battery protection PIN 1 S S D D S G S G BOTTOM TOP D MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25C TA = 25C (Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings -20 8 -3 -15 1.5 0.9 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 83 140 C/W Package Marking and Ordering Information Device Marking 1 Device FDZ191P Package WL-CSP Reel Size 7'' Tape Width 8mm Quantity 5000 units (c)2006 Fairchild Semiconductor Corporation FDZ191P Rev.F (W) 1 www.fairchildsemi.com www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -12 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) ID(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -1A Drain to Source On Resistance VGS = -2.5V, ID = -1A VGS = -1.5V, ID = -1A VGS = -4.5V, ID = -1A TJ = 125C On to State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -1A -10 7 -0.4 -0.6 2 67 85 140 87 85 123 200 123 A S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 800 155 90 9 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VDD = -10V ID = -1A VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 11 10 50 30 9 1 2 20 20 80 48 13 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.7 21 5 -1.1 -1.2 A V ns nC IF = -1A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB is defined for reference. For RJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a. 83C/W when mounted on a 1 in2 pad of 2 oz copper,1.5" X 1.5" X 0.062" thick PCB b. 140C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ191P Rev.F (W) 2 www.fairchildsemi.com www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -4.5V VGS = -3.5V VGS = -2.5V VGS = -1.5V 14 -ID, DRAIN CURRENT (A) 1.8 1.6 1.4 1.2 1.0 VGS = -1.5V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 12 10 8 6 4 2 0 0.0 0.5 VGS = -2.0V VGS = -2.5V VGS = -3.5V VGS = -4.5V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = - 0.5A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 ID = -1A VGS = -4.5V 200 160 120 80 TJ = 25oC PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX TJ = 125oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 40 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 60 15 12 9 6 TJ = 125oC PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 10 1 VGS = 0V -ID, DRAIN CURRENT (A) TJ = 125oC 0.1 0.01 1E-3 1E-4 0.0 TJ = 25oC 3 0 0.5 TJ = 25oC TJ = -55oC TJ = -55oC 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDZ191P Rev.F (W) 3 www.fairchildsemi.com www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -1V 2000 4 3 2 1 0 CAPACITANCE (pF) VDD = -5V VDD = -10V VDD = -15V 1000 Ciss Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 0 2 4 6 8 10 12 Qg, GATE CHARGE(nC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 4.0 -ID, DRAIN CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 RJA = 83 C/W o VGS = -4.5V -ID, DRAIN CURRENT (A) 10 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1ms 10ms 100ms 1s DC VGS = - 2.5V 0.1 50 75 100 o 125 150 0.01 0.1 TA = 25OC 1 10 80 TA, CASE TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 50 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V Figure 10. Forward Bias Safe Operating Area FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 TA = 25oC 1 0.5 -3 10 SINGLE PULSE 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 Figure 11. Single Pulse Maximum Power Dissipation FDZ191P Rev.F (W) 4 www.fairchildsemi.com www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDZ191P Rev.F (W) 5 www.fairchildsemi.com www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET www.fairchildsemi.com FDZ191P Rev.F (W) 6 www..com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDZ191P Rev. F (W) 7 www.fairchildsemi.com |
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